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When entering numeric values in the answer fields, you can
use integers (1000), floating-point numbers (1000.0),
scientific notation (1e3), or JSim numeric scale factors (1K).
Problem 1.
The following questions are multiple-choice. Using the "check" button,
you can of course simply keep guessing until you get the right answer.
But you'll be in a much better position to take the quizzes if you take
the time to actually figure out the answers.
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If we set the inputs of a particular CMOS gate to voltages that
correspond to valid logic levels, we would expect the static
power dissipation of the gate to be
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Measuring a particular CMOS device G, we find 1.5V noise margins.
If the width of all mosfets inside of G were doubled, we
would expect the noise margins of the new gate to
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To decrease the output rise time of a CMOS gate one could
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Suppose one wanted to decrease the propagation time of a CMOS
circuit. Which of the following actions would lead to the greatest
possible speed up?
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Problem 2.
Almost all of the power dissipated by CMOS circuits goes into charging
and discharging nodal capacitances. This power can be computed as
C(V2)F where C is the capacitance being
switched, V is the change in voltage, and F is the
frequency at which the switching happens. In CMOS circuits, nodes
are switched between ground (0 volts) and the power supply voltage
(VDD volts), so V is either +VDD or -VDD and so
V2 is VDD2.
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Suppose we have a device implemented in a technology where VDD = 5V.
If we have the option of reimplementing the device in a technology
where VDD = 3.3V, what sort of speedup (i.e., change in F) could
be specified for the reimplementation
assuming we want to keep the power budget unchanged?
Problem 3.
As we saw in Lecture 4, there are 16 possible 2-input combinational
logic gates. The cost of implementing these gates varies
dramatically, requiring somewhere between 0 and 10 mosfets depending
on the gate. For example, it takes 2 mosfets to implement
"F = NOT A", but 4 mosfets (organized as two inverters) to
implement "F = A".
For each of the 2-input gates whose Karnaugh maps are given
below, indicate the minimum number of mosfets required to implement
the gate. You should only consider static fully-complementary
circuits like those shown in lecture; these implementations meet the
following criteria:
- no static power dissipation
- Vol = 0V, Voh = power supply voltage
- Nfets appear only in pulldown paths, Pfets appear only in pullup paths
- the pullup and pulldown are complementary, i.e., when one path is "on", the other is "off"
- the pullup and pulldown circuits can be decomposed into series and parallel connections of mosfets
- all gate implementations restore incoming logic levels (so a wire connecting an input terminal to an output terminal would not be a legal gate implementation)
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