When entering numeric values in the answer fields, you can use integers (1000), floating-point numbers (1000.0), scientific notation (1e3), or JSim numeric scale factors (1K).

Problem 1.

1. Report the mosfet Ids you measured from the device curves for Vgs = 5V and Vds = 1.2V.

   Ids (in amps):

   Compute the effective channel sheet resistance using (Vds)/(Ids) as an estimate for the channel resistance of the test mosfet. Don't forget to correct for the W/L of the test device!

   Sheet resistance (in ohms):

2. Report the mosfet Ids you measured from the device curves for Vgs = 0V and Vds = 2.5V.

   Ids (in amps):

   Calculate the time it would take to discharge 0.05pF capacitor from 5V to 2.5V

   Discharge time (in seconds):

3. Determine a scaled width (SW) for the two pullup mosfets so that the Vin and Vout curves for the NAND gate intersect at VDD/2 (1.65V).

   Scaled width:

4. What is the largest noise immunity we could specify and still have the NAND gate qualify as a legal device? Please fill in your answer with a precision of .01 volts.

   Hint: to measure the low noise margin, use the VTC to determine what Vin has to be in order for Vout to be 3V, then subtract Vol (0.3V) from that number. To measure the high noise margin, use the VTC to determine what Vin has to be in order for Vout to be 0.3V, then subtract that number from Voh (3.0V).

   Maximum noise immunity (in volts):

5. Following standard practice, choose the logic thresholds as follows:
   Vol = 10% of power supply voltage = 0.3V
   Vil = 20% of power supply voltage = 0.6V
   Vih = 80% of power supply voltage = 2.6V
   Voh = 90% of power supply voltage = 3.0V
   

   Measure the contamination and propagation times for your NAND gate using both the falling and rising output transitions.

   tC for falling output (in seconds):

   tP for falling output (in seconds):

   Output fall time (in seconds):

   tC for rising output (in seconds):

   tP for rising output (in seconds):

   Output rise time (in seconds):

   Use these measurements compute estimates for an upper bound for t_C and a lower bound for t_P.

   tC (in seconds):

   tP (in seconds):

6. Recompute your bounds for t_C and t_P this including the measurements you made at 0 degrees C and 100 degrees C.

   Recomputed tC (in seconds):

   Measurement used: --select answer--tC-FALL at 0 degreestC-RISE at 0 degreestC-FALL at 25 degresstC-RISE at 25 degresstC-FALL at 100 degreestC-RISE at 100 degrees

   Recomputed tP (in seconds):

   Measurement used: --select answer--tP-FALL at 0 degreestP-RISE at 0 degreestP-FALL at 25 degresstP-RISE at 25 degresstP-FALL at 100 degreestP-RISE at 100 degrees

   % change in tP: --select answer--0%10%20%30%40%50% or more

7. Compute derating factors for worst case and best case conditions.

   worst case derating factor:

   best case derating factor:

   ratio (worst case)/(best case):

8. Compute extrinsic delay for falling and rising output transition. Remember to convert the answer to the correct units!

   extrinsic delay, falling output (in ns/pf):

   extrinsic delay, rising output (in ns/pf):