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Home > Courses > Electrical Engineering and Computer Science > Compound Semiconductor Devices > Course Home

6.772 Compound Semiconductor Devices

As taught in: Spring 2003

Level:

Graduate

Instructors:

Prof. Clifton Fonstad Jr.

Course Features

Course Highlights

Course Description

Technical Requirements

Silicon nanocrystal.
Calculated valence electron density of a silicon nanocrystal. (Image courtesy of Zack Helms, Quantum Simulations Laboratory, North Carolina State University. Simulations completed using computational resources provided by the National Center for Supercomputing Applications. Image provided by the National Science Foundation Image Library.)

Course Features

Course Highlights

This site consists of a complete set of lecture notes and selected student term projects.

Course Description

This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

Technical Requirements

Microsoft® Excel software is recommended for viewing the .xls files found on this course site. Free Microsoft® Excel viewer software can also be used to view the .xls files.


*Some translations represent previous versions of courses.

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