* nominal device models for 6.004
.global vdd
.temp 25
VDD vdd 0 3.3v
.MODEL NENH NMOS LEVEL=3 PHI=0.700000 TOX=9.4000E-09 XJ=0.200000U TPG=1
+ VTO=0.6746 DELTA=1.1480E+00 LD=3.4510E-08 KP=1.8217E-04
+ UO=495.9 THETA=1.7960E-01 RSH=3.2470E+01 GAMMA=0.5383
+ NSUB=1.1780E+17 NFS=7.1500E+11 VMAX=2.5000E+05 ETA=2.1880E-02
+ KAPPA=4.2390E-01 CGDO=9.0000E-11 CGSO=9.0000E-11
+ CGBO=3.7441E-10 CJ=5.79E-04 MJ=0.611 CJSW=2.00E-11
+ MJSW=0.621 PB=0.99
.MODEL PENH PMOS LEVEL=3 PHI=0.700000 TOX=9.4000E-09 XJ=0.200000U TPG=-1
+ VTO=-0.8887 DELTA=1.0060E+00 LD=1.0920E-08 KP=4.5773E-05
+ UO=124.6 THETA=6.9020E-02 RSH=1.9550E-01 GAMMA=0.4097
+ NSUB=6.8230E+16 NFS=6.5000E+11 VMAX=1.0000E+06 ETA=4.2420E-02
+ KAPPA=8.6130E+00 CGDO=9.0000E-11 CGSO=9.0000E-11
+ CGBO=3.5362E-10 CJ=9.30E-04 MJ=0.485 CJSW=2.32E-10
+ MJSW=0.213 PB=0.89
.options SCALE=0.6u CADJUST=0.87
.options vih=2.7 vil=0.6

.plotdef betaop
+ ???    ???    ???    ???    ???    ???    ???    ???
+ ???    ???    ???    ???    ???    ???    ???    ???
+ ???    ???    ???    ???    ???    ???    ???    ???
+ LD     ST     ???    JMP    ???    BEQ    BNE    LDR
+ ADD    SUB    MUL    DIV    CMPEQ  CMPLT  CMPLE  ???
+ AND    OR     XOR    ???    SHL    SHR    SRA    ???
+ ADDC   SUBC   MULC   DIVC   CMPEQC CMPLTC CMPLEC ???
+ ANDC   ORC    XORC   ???    SHLC   SHRC   SRAC   ???

*PROCESS PARAMETERS     N+DIFF  P+DIFF   POLY  METAL1  METAL2  METAL3  UNITS
* Sheet Resistance        2.1     2.0    1.9     0.07    0.07    0.03  ohms/sq
* Width Variation        -0.36   -0.29  -0.04    0.16   -0.04   -0.30  microns
*  (measured - drawn)
* Contact Resistance      2.3     2.2    2.2             0.82    0.87  ohms
* Gate Oxide Thickness   94                                            angstroms


*CAPACITANCE PARAMETERS  N+DIFF  P+DIFF   POLY  METAL1  METAL2   METAL3  UNITS
* Area (substrate)       546     929       92    47      25       25     aF/um^2
* Area (poly)                                    59      18       11     aF/um^2
* Area (metal1)                                          37       14     aF/um^2
* Area (metal2)                                                   33     aF/um^2
* Area (N+active)                        3684                            aF/um^2
* Area (P+active)                        3500                            aF/um^2
* Fringe (substrate)     195     234                                     aF/um
* Fringe (N+active)                       105                            aF/um