||Introduction to semiconductors, doping, generation/recombination, TE carrier concentrations. Carrier dynamics and transport: drift.
||Chapter 1; Chapter 2; Section 3.1
||Excess populations and minimum carrier lifetime, photoconductivity. Non-uniform concentrations and diffusion. Fick's first and second laws.
||Chapter 3; Section 4.1
||The five basic equations. Device structures in TE: carriers and electrostatic potential; the 60 mV rule. Poisson's equation (PE).
||Sections 4.2 and 4.3; Chapter 6
||P-n junctions in thermal equilibrium and under reverse bias, the depletion approximation (DA), comparison to PE solution.
||Sections 7.1 and 7.2
||Review reverse biased junctions. Consider forward bias and the special case of minority carrier injection into quasineutral regions.
||Forward biased p-n junctions: carrier injection, i-v characteristics (ideal and real; forward and reverse). Engineering carrier injection.
||Bipolar junction transistors: two coupled diodes, terminal characteristics, regions of operation
||Solar cells and LEDs (light emitting diodes).
||Sections 7.5 and 7.6
||MOS capacitors: the DA applied to two-terminal MOS capacitor accumulation, depletion, and inversion; VFB, VT, QA, and QN
||Sections 9.1, 9.2, 9.3, and 9.4
||The three-terminal MOS capacitor. MOSFETs: begin gradual channel approximation (GCA) using DA and ignoring subthreshold carriers.
||Sections 9.3 and 9.4; Section 10.1.1 (a)
||Complete GC/DA model for iDS: saturation, channel length modulation. Output characteristics; regions of operation.
||Section 10.1.1 (a)
||Subthreshold operation of MOSFETs. Development of model; compare to full numerical solution. Compare to/contrast with BJTs.
||Linear equivalent circuits for MOSFETs and BJTs at low and high frequency; transconductance of subthreshold MOSFETs.
||Section 10.1.2 (a) and (c)
||Logic inverter basics. Introduction to CMOS: transfer characteristics, noise margins, optimal device sizing.
||CMOS analysis, continued: switching delays, power dissipation, speed/power trade-offs.
||CMOS analysis, continued: subthreshold leakage, scaling rules, and where it is all going.
||Linear amplifier basics: performance metrics, current source biasing, current mirrors, mid-band range, two-port representation.
||Sections 11.1 and 11.2
||Single-transistor building block stages: common-source, common-gate, and common-drain (follower) stages; characteristics and features.
||Differential amplifiers: large signal transfer characteristics; small signal analysis using common- and difference-mode inputs.
||Sections 12.1, 12.2, and 12.3
||Multi-stage amplifiers I: cascading diff stages; current source biasing; output stages.
||Sections 12.4 and 12.5
||Multi-stage amplifiers II: active loads, biasing for maximum gain, input and output swings.
||Multi-stage amplifiers III: examples, stage selection, speciality stages, looking at a commercial op-amp schematic. Begin frequency response.
||Chapter 13; Section 14.2.1
||Frequency response of CS amplifiers, the Miller effect. Intrinsic frequency limitations of MOSFETs. Biasing to maximize speed, power trade-off.
||Sections 14.2.2 and 14.3
||OCTC method for estimating frequency response. Subthreshold amplifiers for ultra-lower power electronics, frequency performance.
||MOS imagers. Semester wrap-up; life after 6.012.