Integrated Microelectronic Devices

Diagram of a transistor.

Schematic diagram of a modern bipolar junction transistor (BJT): cross section shown. (Image by Jesús del Alamo.)


MIT Course Number

6.720J / 3.43J

As Taught In

Spring 2007



Cite This Course

Course Features

Course Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.


Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Other OCW Versions

Archived versions: Question_avt logo

Jesús del Alamo. 6.720J Integrated Microelectronic Devices, Spring 2007. (Massachusetts Institute of Technology: MIT OpenCourseWare), (Accessed). License: Creative Commons BY-NC-SA

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