Integrated Microelectronic Devices

Diagram of a transistor.

Schematic diagram of a modern bipolar junction transistor (BJT): cross section shown. (Image by Jesús del Alamo.)

Instructor(s)

MIT Course Number

6.720J / 3.43J

As Taught In

Spring 2007

Level

Graduate

Translated Versions

简体字

Cite This Course

Course Features

Course Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.

Acknowledgments

Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Archived Versions

del Alamo, Jesús. 6.720J Integrated Microelectronic Devices, Spring 2007. (MIT OpenCourseWare: Massachusetts Institute of Technology), http://ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-720j-integrated-microelectronic-devices-spring-2007 (Accessed). License: Creative Commons BY-NC-SA


For more information about using these materials and the Creative Commons license, see our Terms of Use.


Close