| L1 |
6.720 overview; fundamental concepts |
Chapter 1 |
| L2 |
Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) |
Chapter 2, sections 2.1-2.4 (2.4.1) |
| L3 |
Carrier statistics in semiconductors; Fermi level |
Chapter 2, sections 2.4-2.6 |
| L4 |
Generation and recombination mechanisms; equilibrium rates |
Chapter 3, sections 3.1-3.4 |
| L5 |
Generation and recombination rates outside equilibrium |
Chapter 3, sections 3.4-3.7 |
| L6 |
Carrier dynamics; thermal motion |
Chapter 4, sections 4.1-4.3 |
| L7 |
Drift; diffusion; transit time |
Chapter 4, section 4.5 |
| L8 |
Non-uniform doping distribution |
Chapter 4, section 4.6; Chapter 5, sections 5.1 and 5.2 |
| L9 |
Quasi-Fermi levels; continuity equations |
Chapter 5, sections 5.3-5.5 |
| L10 |
Shockley equations; majority-carrier type situations |
Chapter 5, section 5.6 |
| L11 |
Minority-carrier type situations: statics |
Chapter 5, section 5.4 |
| L12 |
Minority-carrier dynamics; space-charge and high-resistivity (SCR) transport; carrier multiplication |
Chapter 5, section 5.7 |
| L13 |
PN junction: electrostatics in and out of equilibrium |
Chapter 7, sections 7.1 and 7.2 (7.2.1, 7.2.2) |
| L14 |
PN junction: depletion capacitance; current-voltage (I-V) characteristics |
Chapter 7, section 7.2 (7.2.3) |
| L15 |
PN junction: carrier storage; diffusion capacitance; PN diode: parasitics |
Chapter 6, sections 6.2 (6.2.4) and 6.3 |
| L16 |
PN junction dynamics; PN diode: non-ideal and second-order effects |
Chapter 6, section 6.4 |
| L17 |
Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics |
Chapter 7, sections 7.1 and 7.2 |
| L18 |
Metal semiconductor junction I-V characteristics |
Chapter 7, section 7.2.3 |
| L19 |
Schottky diode; equivalent-circuit model; ohmic contacts |
Chapter 7, sections 7.3-7.5 |
| L20 |
Ideal semiconductor surface |
Chapter 8, sections 8.1-8.2 (8.2.1-8.2.2) |
| L21 |
Metal-oxide-semiconductor (MOS) in equilibrium |
Chapter 8, sections 8.2 (8.2.3, 8.2.4) and 8.3 (8.3.1) |
| L22 |
MOS outside equilibrium; Poisson-Boltzmann formulation |
Chapter 8, section 8.3 (8.3.2-8.3.4) |
| L23 |
Simplifications to Poisson-Boltzmann formulation |
Chapter 8, sections 8.3 (8.3.5) and 8.4 (8.4.1, 8.4.2) |
| L24 |
Dynamics of MOS structure: C-V characteristics; three-terminal MOS |
Chapter 8, sections 8.5-8.6; Chapter 9, section 9.1 |
| L25 |
Inversion layer transport |
Chapter 9, sections 9.2-9.4 (9.4.1, 9.4.2) |
| L26 |
Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics |
Chapter 9, sections 9.4 (9.4.3-9.4.5) and 9.5 |
| L27 |
I-V characteristics (cont.): body effect, back bias |
Chapter 9, sections 9.5 (9.5.2) and 9.6 |
| L28 |
I-V characteristics (cont.): channel-length modulation, sub threshold regime |
Chapter 9, section 9.7 |
| L29 |
C-V characteristics; small-signal equivalent circuit models |
Chapter 9, sections 9.7.3 and 9.7.4 |
| L30 |
Short-channel MOSFET: short-channel effects |
Ko, P. K. "Approaches to Scaling." |
| L31 |
MOSFET short-channel effects (cont.) |
Ko, P. K. "Approaches to Scaling." |
| L32 |
MOSFET scaling |
Ko, P. K. "Approaches to Scaling." |
| L33 |
Evolution of MOSFET design |
|
| L34 |
Bipolar junction transistor (BJT) intro; basic operation |
Chapter 11, sections 11.1 and 11.2 (11.2.1) |
| L35 |
BJT I-V characteristics in forward-active |
Chapter 11, section 11.2 (11.2.1) |
| L36 |
Other regimes of operation of BJT |
Chapter 11, sections 11.2 (11.2.5), 11.3, and 11.4 (11.4.1) |
| L37 |
BJT C-V characteristics; small-signal equivalent circuit models |
Chapter 11, section 11.4.2 |
| L38 |
BJT high-frequency characteristics |
Chapter 11, section 11.5 (11.5.1, 11.5.3, 11.5.4, 11.5.5 but only qualitatively) |
| L39 |
BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) |
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