Compound Semiconductor Devices

Silicon nanocrystal.

Calculated valence electron density of a silicon nanocrystal. (Image courtesy of Zack Helms, Quantum Simulations Laboratory, North Carolina State University. Simulations completed using computational resources provided by the National Center for Supercomputing Applications. Image provided by the National Science Foundation Image Library.)

Instructor(s)

MIT Course Number

6.772

As Taught In

Spring 2003

Level

Graduate

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Course Features

Course Description

This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

Fonstad Jr., Clifton. 6.772 Compound Semiconductor Devices, Spring 2003. (MIT OpenCourseWare: Massachusetts Institute of Technology), http://ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-772-compound-semiconductor-devices-spring-2003 (Accessed). License: Creative Commons BY-NC-SA


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