Physics of Microfabrication: Front End Processing

Image of a silicon wafer.

A silicon wafer that may be exposed to deposition and etching processes. (Image courtesy of NASA Space Research.)

Instructor(s)

MIT Course Number

6.774

As Taught In

Fall 2004

Level

Graduate

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Course Features

Course Description

This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

Hoyt, Judy, and L. Reif. 6.774 Physics of Microfabrication: Front End Processing, Fall 2004. (MIT OpenCourseWare: Massachusetts Institute of Technology), http://ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-774-physics-of-microfabrication-front-end-processing-fall-2004 (Accessed). License: Creative Commons BY-NC-SA


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