Translations*

Audio Lectures


3: Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

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4: Wafer Cleaning and Gettering (cont.)

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5: Wafer Cleaning and Gettering - Contamination Measurement Techniques

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6: Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models

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7: Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defect

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8: Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

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9: Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects

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10: Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion

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11: Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques

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12: Ion Implantation and Annealing - Analytic Models and Monte Carlo

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13: Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED

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14: Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction

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15: Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail

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16: The SUPREM IV Process Simulator

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17: Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth

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18: Thin Film Deposition and Epitaxy - CVD Examples and PVD

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19: Thin Film Deposition and Epitaxy - Modeling Topography of Deposition

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20: Etching - Introduction

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21: Etching - Poly Gate Etching, Stringers, Modeling of Etching

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22: Silicides, Device Contacts, Novel Gate Materials

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23: Growth and Processing of Strained Si/SiGe and Stress Effects on Devices

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