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Electrical Engineering and Computer Science
Physics of Microfabrication: Front End Processing
3: Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)
4: Wafer Cleaning and Gettering (cont.)
5: Wafer Cleaning and Gettering - Contamination Measurement Techniques
6: Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models
7: Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defect
8: Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic
9: Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects
10: Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion
11: Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques
12: Ion Implantation and Annealing - Analytic Models and Monte Carlo
13: Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED
14: Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction
15: Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail
16: The SUPREM IV Process Simulator
17: Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth
18: Thin Film Deposition and Epitaxy - CVD Examples and PVD
19: Thin Film Deposition and Epitaxy - Modeling Topography of Deposition
20: Etching - Introduction
21: Etching - Poly Gate Etching, Stringers, Modeling of Etching
22: Silicides, Device Contacts, Novel Gate Materials
23: Growth and Processing of Strained Si/SiGe and Stress Effects on Devices
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