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Readings

This section contains readings that were used during the course. The book by Plummer, Deal and Griffin is the only required text but the other reading material is useful for obtaining a better understanding of the course topics. The readings for each session from the required textbook are listed below in the table.

Wherever possible, the book citations below reflect the specific editions used in the course.

Texts

Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.

Wolf, Stanley, and Richard Tauber. Silicon Processing for the VLSI Era . 2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.

Sze, Simon. VLSI Technology. 2nd ed. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.

Campbell, Stephen. The Science and Engineering of Microelectronic Fabrication. 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.

Vossen, John, and Werner Kern, eds. Thin Film Processes. Burlington, MA: Academic Press, 1978. ISBN: 0127282505.

Vossen, John, and Werner Kern. Thin Film Processes. Burlington, MA: Academic Press, 1991. ISBN: 0127282513.

Mayer, James W., and Sylvanus S. Lau. Electronic Materials Science: For Integrated Circuits in Si and GaAs. New York, NY: Macmillan, 1990. ISBN: 0023781408.

Pierret, Robert, and George W. Neudeck. Modular Series on Solid State Devices. Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.

Pierret, Robert. Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.

Taur, Yuan, and Tak H. Ning. Fundamentals of Modern VLSI Devices. Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.

Journals/Conference Proceedings

IEEE Transactions on Electron Devices (published monthly)

Applied Physics Letters

Journal of Applied Physics

IEEE IEDM Conference Proceedings (published each December)

Readings by Session

Lec # TOPICS READINGS

1

Introduction to 6.774

CMOS Process Flow

Chapters 1 and 2

2

Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers

Chapter 3

3

Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

Wafer Cleaning and Gettering

Chapter 3 and start chapter 4

4

Wafer Cleaning and Gettering (cont.)

Chapter 4

5

Wafer Cleaning and Gettering - Contamination Measurement Techniques

Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques

Chapter 4 and start chapter 6

6

Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models

Chapter 6

7

Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects

Chapter 6

8

Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

Chapter 7

9

Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects

Chapter 7

10

Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion

Chapter 7

11

Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques

Chapter 7

12

Ion Implantation and Annealing - Analytic Models and Monte Carlo

Chapter 8

13

Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED

Chapter 8

14

Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction

Chapter 8

15

Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail

Chapter 8

16

The SUPREM IV Process Simulator

17

Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth

Chapter 9

18

Thin Film Deposition and Epitaxy - CVD Examples and PVD

Chapter 9

19

Thin Film Deposition and Epitaxy - Modeling Topography of Deposition

Chapter 9

20

Etching - Introduction

Chapter 10

21

Etching - Poly Gate Etching, Stringers, Modeling of Etching

Chapter 10

22

Silicides, Device Contacts, Novel Gate Materials

Chapter 11

23

Growth and Processing of Strained Si/SiGe and Stress Effects on Devices

24-26

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