Physics of Microfabrication: Front End Processing

Readings

This section contains readings that were used during the course. The book by Plummer, Deal and Griffin is the only required text but the other reading material is useful for obtaining a better understanding of the course topics. The readings for each session from the required textbook are listed below in the table.

Wherever possible, the book citations below reflect the specific editions used in the course.

Texts

Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.

Wolf, Stanley, and Richard Tauber. Silicon Processing for the VLSI Era. 2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.

Sze, Simon. VLSI Technology. 2nd ed. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.

Campbell, Stephen. The Science and Engineering of Microelectronic Fabrication. 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.

Vossen, John, and Werner Kern, eds. Thin Film Processes. Burlington, MA: Academic Press, 1978. ISBN: 0127282505.

Vossen, John, and Werner Kern. Thin Film Processes. Burlington, MA: Academic Press, 1991. ISBN: 0127282513.

Mayer, James W., and Sylvanus S. Lau. Electronic Materials Science: For Integrated Circuits in Si and GaAs. New York, NY: Macmillan, 1990. ISBN: 0023781408.

Pierret, Robert, and George W. Neudeck. Modular Series on Solid State Devices. Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.

Pierret, Robert. Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.

Taur, Yuan, and Tak H. Ning. Fundamentals of Modern VLSI Devices. Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.

Journals/Conference Proceedings

IEEE Transactions on Electron Devices (published monthly)

Applied Physics Letters

Journal of Applied Physics

IEEE IEDM Conference Proceedings (published each December)

Readings by Session

Lec #	TOPICS	READINGS
1	Introduction to 6.774 CMOS Process Flow	Chapters 1 and 2
2	Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers	Chapter 3
3	Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.) Wafer Cleaning and Gettering	Chapter 3 and start chapter 4
4	Wafer Cleaning and Gettering (cont.)	Chapter 4
5	Wafer Cleaning and Gettering - Contamination Measurement Techniques Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques	Chapter 4 and start chapter 6
6	Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models	Chapter 6
7	Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects	Chapter 6
8	Dopant Diffusion - Need for Abrupt Profiles, Fick’s Laws, Simple Analytic	Chapter 7
9	Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects	Chapter 7
10	Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion	Chapter 7
11	Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques	Chapter 7
12	Ion Implantation and Annealing - Analytic Models and Monte Carlo	Chapter 8
13	Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED	Chapter 8
14	Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction	Chapter 8
15	Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail	Chapter 8
16	The SUPREM IV Process Simulator
17	Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth	Chapter 9
18	Thin Film Deposition and Epitaxy - CVD Examples and PVD	Chapter 9
19	Thin Film Deposition and Epitaxy - Modeling Topography of Deposition	Chapter 9
20	Etching - Introduction	Chapter 10
21	Etching - Poly Gate Etching, Stringers, Modeling of Etching	Chapter 10
22	Silicides, Device Contacts, Novel Gate Materials	Chapter 11
23	Growth and Processing of Strained Si/SiGe and Stress Effects on Devices
24-26	Report Presentations