6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models | Physics of Microfabrication: Front End Processing | Electrical Engineering and Computer Science | MIT OpenCourseWare

6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models

Course Info

Instructors

Departments

Electrical Engineering and Computer Science

As Taught In

Fall 2004

Level

Graduate

Topics

Learning Resource Types

Lecture Audio

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