Physics of Microfabrication: Front End Processing

Audio Lectures

NOTE: Lectures 1 and 2 are not available.

3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

4. Wafer Cleaning and Gettering (cont.)

5. Wafer Cleaning and Gettering - Contamination Measurement Techniques

6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models

7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect

8. Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

9. Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects

10. Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion

11. Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques

12. Ion Implantation and Annealing - Analytic Models and Monte Carlo

13. Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED

14. Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction

15. Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail

16. The SUPREM IV Process Simulator

17. Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth

18. Thin Film Deposition and Epitaxy - CVD Examples and PVD

19. Thin Film Deposition and Epitaxy - Modeling Topography of Deposition

20. Etching - Introduction

21. Etching - Poly Gate Etching, Stringers, Modeling of Etching

22. Silicides, Device Contacts, Novel Gate Materials

23. Growth and Processing of Strained Si/SiGe and Stress Effects on Devices