Physics of Microfabrication: Front End Processing

Calendar

Lec #	TOPICS	KEY DATES
1	Introduction to 6.774 CMOS Process Flow
2	Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers	Homework 1 out
3	Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.) Wafer Cleaning and Gettering
4	Wafer Cleaning and Gettering (cont.)	Homework 1 due
5	Wafer Cleaning and Gettering - Contamination Measurement Techniques Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques	Homework 2 out
6	Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models
7	Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects	Homework 2 due
8	Dopant Diffusion - Need for Abrupt Profiles, Fick’s Laws, Simple Analytic	Homework 3 out
9	Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects
10	Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion
11	Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques	Homework 3 due
12	Ion Implantation and Annealing - Analytic Models and Monte Carlo
13	Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED	Homework 4 out
14	Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction
15	Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail
16	The SUPREM IV Process Simulator	Homework 4 due
17	Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth	Homework 5 out
18	Thin Film Deposition and Epitaxy - CVD Examples and PVD
19	Thin Film Deposition and Epitaxy - Modeling Topography of Deposition	Homework 5 due
20	Etching - Introduction
21	Etching - Poly Gate Etching, Stringers, Modeling of Etching
22	Silicides, Device Contacts, Novel Gate Materials
23	Growth and Processing of Strained Si/SiGe and Stress Effects on Devices
24-26	Report Presentations