Course Meeting Times
Lectures: 2 sessions / week, 1.5 hours / session
This course has no official prerequisites. However, we do assume a very thorough knowledge of the 1st-year basic sciences and a solid grasp of the EE or ME undergraduate curriculum. The class makes use of elementary concepts from optics, mechanics, special relativity, Fourier transforms, and chemistry.
Collaboration is permitted (but not necessarily encouraged) on all assignments except the final assignment. This collaboration should take the form of discussion of problem approaches and solutions, but each student should write up his or her own solutions individually, without consulting others. The completed assignment should indicate if anyone outside of the teaching staff was consulted, and if so, who.
The final assignment should consist of strictly individual work.
Prior year's lecture notes of other students may be consulted, however prior year's work on assignments may not be consulted.
Assessment and Grading
Student's performance will be assessed primarily based on their performance on the final homework assignment (distributed in Ses #20, and due in Ses #26). This assignment will comprise at least 50% of the course grade. The remainder will be made up of the remaining homework assignments (of which there will be 13). The final assignment will be weighted more heavily in instances where the student's performance on it differs markedly (either positively or negatively) from their performance in the remainder in the class.
There will be no final examination for this class.
Upon completion of 6.781J/2.391J, students will know, and understand the principles of nanofabrication and materials analysis methods including:
- Optical Microscopy
- Optical Lithography
- Electron-Beam Microscopy
- Electron-Beam Lithography
- Ion-Beam Microscopy
- Ion-Beam Lithography
- Scanning-Probe Microscopy
- Scanning-Probe Lithography
- Thin-film Patterning using Aqueous, Ion, and Plasma Etching Methods
- Thin-film Patterning using Lift-off and Electroplating
- Substrate Cleaning
- Cleanroom Principles
Students will understand the concepts of lithographic and microscopic resolution, and be able to apply this knowledge to calculate resolution limits for lithographic and imaging/inspection tools. They will be able to define the concept of contrast and a transfer function for an optical system, and explain their role in both microscopy and lithography. They will know the factors that establish practical resolution limits for major microscopy and lithography approaches and explain the impact of these factors. Students will also be able to comprehend, evaluate, and critique articles on nanolithography and microscopy from the recent literature. Students will understand how nanofabrication tools are applied to fabricate nanostructures in materials and be able to analyze and evaluate proposed approaches to material processing.
First, please note an important conceptual point about the class schedule: We distinguish a class (which occurs on a set date and time) from a lecture (which is a discussion of a single conceptually related set of topics). A class can contain a single or multiple lectures covered in whole or in part. Similarly, a lecture can span multiple classes.
|SES #||TOPICS||KEY DATES|
|1||Introduction to Nanometer-structures Technology and Applications
Fourier Optics, Optical Microscope
|Assignment 1 handed out|
|2||Fourier Optics, Optical Microscope (cont.)||Assignment 2 handed out|
|3||Spatial Filtering and Contrast in Optical Microscopy||
Assignments 1 and 2 due
Assignment 3 handed out
|4||Spatial Filtering and Contrast in Optical Microscopy (cont.)||Assignment 4 handed out|
|5||Electron Optics and the Transmission-Electron Microscope|
|6||Electron Optics and the Transmission-Electron Microscope (cont.)||
Assignments 3 and 4 due
Assignment 5 handed out
Signals Collected in Scanning-Electron-Beam Systems
|Assignment 5 due|
|8||Signals Collected in Scanning-Electron-Beam Systems (cont.)
Noise Analysis in Scanning-Electron-Beam Systems
|9||Substrate Preparation, Characterization, Interferometry, Ellipsometry||Assignment 6 handed out|
|10||Proximity-Probe Methods in Microscopy and Lithography|
|11||Contamination Control, Cleanrooms, and Substrate Cleaning||
Assignment 6 due
Assignments 7 and 8 handed out
|12||Resists||Assignment 9 handed out|
|13||Etching in Reactive Gaseous Plasmas||
Assignments 7 and 8 due
Assignments 10 and 11 handed out
|14||Photolithography||Assignment 9 due|
|15||Optical Projection Photolithography||Assignment 10 due|
|16||Optical Projection Photolithography (cont.)|
|17||Phase-Measuring Laser Interferometer||
Assignment 11 due
Assignments 12a 12b handed out
|18||Electron-Beam Lithography (Guest Speaker: Mark Mondol)||Assignment 13 handed out|
|19||Electron Scattering and Proximity Effects||Assignments 12a, 12b, and 13 due|
Analyzing and Avoiding Distortion in E-beam Systems (SPLEBL)
|Final assignment handed out|
|21||Nanoimprint and Soft Lithography
|22||Alignment (Guest Speaker: Dr. Euclid Moon)|
|23||Lift-off and Electroplating|
|24||Nonlinear Methods in Optical Lithography|
|25||Special Class: The Debate|
|26||Helium-Ion-Beam Microscopy and Lithography||Final assignment due|