The readings given below refer to sections in the course textbook:
Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach. Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 9780135885185.
Abbreviations
MOS = metal-on-silicon
MOSFET = metal-oxide-semiconductor field-effect transistor
NMOS = n-type metal-oxide-semiconductor
CMOS = complementary metal-oxide-semiconductor
| LEC # | TOPICS | READINGS |
|---|---|---|
| 1 |
6.012 outline: grading, ethics Overview of semiconductor applications, silicon integrated circuit technology |
2.5 |
| 2 | Intrinsic semiconductors, electrons and holes, bond model, generation recombination and thermal equilibrium; doping, donors, acceptors, compensation | 2.1-2.2 |
| 3 | Carrier transport, drift velocity, drift current density, diffusion current density | 2.4 |
| 4 | The p-n junction, carrier concentration and potential in thermal equilibrium, 60mV rule | 3.2-3.3 |
| 5 | The p-n junction in thermal equilibrium | 3.4 |
| 6 | Introduction to the MOS structure, MOS capacitor in thermal equilibrium | 3.7 |
| 7 | MOS capacitor under applied bias; accumulation, depletion, and inversion regions | 3.8 |
| 8 | MOSFET physical structure, circuit symbol and terminal characteristics, MOS transistor characteristics | 4.1-4.3 |
| 9 | MOS transistor, backgate effect, MOSFET in saturation | 4.4 |
| 10 | MOSFET small-signal model | 4.5 |
| 11 | Digital logic concepts, inverter characteristics, logic levels and noise margins, transient characteristics, inverter circuits, NMOS/resistor loads | 5.1-5.2 |
| 12 | NMOS/current source load, CMOS inverter, static analysis | 5.3-5.4 |
| 13 | CMOS inverter, propagation delay model, static CMOS gates | 5.5 |
| 14 | p-n junction diode terminal characteristics, minority carrier concentration under forward and reverse bias | 6.1-6.3 |
| 15 | Short base approximation, steady state diffusion equation with currents in p-n junction | 6.3 |
| 16 | p-n junction diode circuit model, large signal static model, small signal model, diffusion capacitance | 6.4 |
| 17 | Introduction of bipolar junction transistor, terminal characteristics, forward active bias, current gain | 7.1-7.2 |
| 18 | Reverse active mode and saturation, the Ebers-Moll model | 7.3-7.4 |
| 19 | Single stage amplifiers, two port small signal model, common source amplifier with resistor and current source supply | 8.1-8.6 |
| 20 | Common base/gate amplifier, common collector/drain | 8.8-8.9 |
| 21 | Review frequency domain analysis; current gain frequency response of common emitter amplifier | 10.1-10.3 |
| 22 | Voltage gain frequency response of common emitter amplifier, full analysis of common emitter, the Miller approximation | 10.4 |
| 23 | Open circuit time constant analysis, common-gate (CG) and common-drain (CD) amplifiers | 10.5-10.6 |
| 24 | Multistage amplifiers, cascading small signal two port models | 9.1-9.2 |
| 25 | DC coupling, voltage sources, MOS current sources, current sources and sinks | 9.4 |
| 26 | Analyzing complex circuits and course wrap-up | 9.6 and 10.7 |
