6.012 | Spring 2009 | Undergraduate
Microelectronic Devices and Circuits


The readings given below refer to sections in the course textbook:

Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach. Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 9780135885185.


MOS = metal-on-silicon
MOSFET = metal-oxide-semiconductor field-effect transistor
NMOS = n-type metal-oxide-semiconductor
CMOS = complementary metal-oxide-semiconductor


6.012 outline: grading, ethics

Overview of semiconductor applications, silicon integrated circuit technology

2 Intrinsic semiconductors, electrons and holes, bond model, generation recombination and thermal equilibrium; doping, donors, acceptors, compensation 2.1-2.2
3 Carrier transport, drift velocity, drift current density, diffusion current density 2.4
4 The p-n junction, carrier concentration and potential in thermal equilibrium, 60mV rule 3.2-3.3
5 The p-n junction in thermal equilibrium 3.4
6 Introduction to the MOS structure, MOS capacitor in thermal equilibrium 3.7
7 MOS capacitor under applied bias; accumulation, depletion, and inversion regions 3.8
8 MOSFET physical structure, circuit symbol and terminal characteristics, MOS transistor characteristics 4.1-4.3
9 MOS transistor, backgate effect, MOSFET in saturation 4.4
10 MOSFET small-signal model 4.5
11 Digital logic concepts, inverter characteristics, logic levels and noise margins, transient characteristics, inverter circuits, NMOS/resistor loads 5.1-5.2
12 NMOS/current source load, CMOS inverter, static analysis 5.3-5.4
13 CMOS inverter, propagation delay model, static CMOS gates 5.5
14 p-n junction diode terminal characteristics, minority carrier concentration under forward and reverse bias 6.1-6.3
15 Short base approximation, steady state diffusion equation with currents in p-n junction 6.3
16 p-n junction diode circuit model, large signal static model, small signal model, diffusion capacitance 6.4
17 Introduction of bipolar junction transistor, terminal characteristics, forward active bias, current gain 7.1-7.2
18 Reverse active mode and saturation, the Ebers-Moll model 7.3-7.4
19 Single stage amplifiers, two port small signal model, common source amplifier with resistor and current source supply 8.1-8.6
20 Common base/gate amplifier, common collector/drain 8.8-8.9
21 Review frequency domain analysis; current gain frequency response of common emitter amplifier 10.1-10.3
22 Voltage gain frequency response of common emitter amplifier, full analysis of common emitter, the Miller approximation 10.4
23 Open circuit time constant analysis, common-gate (CG) and common-drain (CD) amplifiers 10.5-10.6
24 Multistage amplifiers, cascading small signal two port models 9.1-9.2
25 DC coupling, voltage sources, MOS current sources, current sources and sinks 9.4
26 Analyzing complex circuits and course wrap-up 9.6 and 10.7
Learning Resource Types
assignment Problem Sets
grading Exams
notes Lecture Notes
group_work Projects