6.012 | Spring 2009 | Undergraduate

Microelectronic Devices and Circuits


These recitation notes were developed by Prof. Jing Kong, and were transcribed by Pavitra Krishnaswamy.


MOS = metal-on-silicon
MOSFET = metal-oxide-semiconductor field-effect transistor
CMOS = complementary metal-oxide-semiconductor
BJT = bipolar junction transmitter

1 Integrated circuit technology (PDF)
2 Equilibrium electron and hole concentration from doping (PDF)
3 Carrier action (PDF)
4 Electrostatic potential and carrier concentration (PDF)
5 Review of electrostatics (PDF)
6 p-n junction (PDF)
7 From n+p diode to MOS structure (PDF)
8 MOS electrostatics under bias, MOS capacitor (PDF)
9 MOSFET V-I characteristics (PDF)
10 MOSFET V-I characteristics: channel length modulation and back gate effect (PDF)
11 Small signal model of MOSFET, MOSFET in digital circuits (PDF)
12 CMOS noise margin (PDF)
13 Propagation delay, NAND/NOR gates (PDF)
14 p-n diode I-V characteristics (I) (PDF)
15 p-n diode I-V characteristics (II) (PDF)
16 Small signal model of p-n diode (PDF)
17 BJT: basic operation in forward-active regime (PDF)
18 BJT: regions of operation, small signal model (PDF)
19 Common emitter amplifier (PDF)
20 Amplifiers review (PDF)
21 Intrinsic frequency response of common source (CS) and common emitter (CE) amplifier (PDF)
22 CS amplifier frequency response (PDF)
23 Frequency response of common collector (CC) and common base (CB) amplifier (PDF)
24 BiCMOS cascode amplifier (PDF)
25 CMOS cascade amplifier (PDF)
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