Integrated Microelectronic Devices

Lecture Notes

SES #	TOPICS
L1	6.720 overview; fundamental concepts (PDF 1) (PDF 2)
L2	Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) (PDF)
L3	Carrier statistics in semiconductors; Fermi level (PDF)
L4	Generation and recombination mechanisms; equilibrium rates (PDF)
L5	Generation and recombination rates outside equilibrium (PDF)
L6	Carrier dynamics; thermal motion (PDF)
L7	Drift; diffusion; transit time (PDF)
L8	Non-uniform doping distribution (PDF)
L9	Quasi-Fermi levels; continuity equations (PDF)
L10	Shockley equations; majority-carrier type situations (PDF)
L11	Minority-carrier type situations: statics (PDF)
L12	Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication (PDF)
L13	PN junction: electrostatics in and out of equilibrium (PDF)
L14	PN junction: depletion capacitance; current-voltage (I-V) characteristics (PDF)
L15	PN junction: carrier storage; diffusion capacitance; PN diode: parasitics (PDF)
L16	PN junction dynamics; PN diode: non-ideal and second-order effects (PDF)
L17	Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics (PDF)
L18	Metal semiconductor junction I-V characteristics (PDF)
L19	Schottky diode; equivalent-circuit model; ohmic contacts (PDF)
L20	Ideal semiconductor surface (PDF)
L21	Metal-oxide-semiconductor (MOS) in equilibrium (PDF)
L22	MOS outside equilibrium; Poisson-Boltzmann formulation (PDF)
L23	Simplifications to Poisson-Boltzmann formulation (PDF)
L24	Dynamics of MOS structure: C-V characteristics; three-terminal MOS (PDF)
L25	Inversion layer transport (PDF)
L26	Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics (PDF - 1.1 MB)
L27	I-V characteristics (cont.): body effect, back bias (PDF)
L28	I-V characteristics (cont.): channel-length modulation, sub threshold regime (PDF)
L29	C-V characteristics; small-signal equivalent circuit models (PDF)
L30	Short-channel MOSFET: short-channel effects (PDF)
L31	MOSFET short-channel effects (cont.) (PDF)
L32	MOSFET scaling (PDF)
L33	Evolution of MOSFET design (PDF)
L34	Bipolar junction transistor (BJT) intro; basic operation (PDF)
L35	BJT I-V characteristics in forward-active (PDF)
L36	Other regimes of operation of BJT (PDF)
L37	BJT C-V characteristics; small-signal equivalent circuit models (PDF)
L38	BJT high-frequency characteristics (PDF)
L39	BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) (PDF)