Textbooks
Required
del Alamo, Jesús A. Integrated Microelectronic Devices: Physics and Modeling. (In preparation.) To be distributed in lecture.
Reference Texts
Muller, Richard S., Theodore I. Kamins, and Mansun Chan. Device Electronics for Integrated Circuits. 3rd ed. New York, NY: John Wiley & Sons, 2002. ISBN: 9780471593980.
Pierret, Robert F. Semiconductor Device Fundamentals. Reading, MA: Addison Wesley, 1996. ISBN: 9780201543933.
Streetman, Ben G. Solid State Electronics Devices. 4th ed. Upper Saddle River, NJ: Prentice Hall, 1995. ISBN: 9780131587670.
Other Useful Books
McKelvey, John P. Solid State and Semiconductor Physics. Melbourne, FL: Krieger Pub Co, 1982. ISBN: 9780898743968.
Tsividis, Yannis P. Operation and Modeling of the MOS Transistor. 2nd ed. New York, NY: McGraw-Hill, 1987. ISBN: 9780070653818.
Readings by Session
The course readings are taken from the required textbook by Prof. Jesús del Alamo.
| SES # | TOPICS | READINGS |
|---|---|---|
| L1 | 6.720 overview; fundamental concepts | Chapter 1 |
| L2 | Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) | Chapter 2, sections 2.1-2.4 (2.4.1) |
| L3 | Carrier statistics in semiconductors; Fermi level | Chapter 2, sections 2.4-2.6 |
| L4 | Generation and recombination mechanisms; equilibrium rates | Chapter 3, sections 3.1-3.4 |
| L5 | Generation and recombination rates outside equilibrium | Chapter 3, sections 3.4-3.7 |
| L6 | Carrier dynamics; thermal motion | Chapter 4, sections 4.1-4.3 |
| L7 | Drift; diffusion; transit time | Chapter 4, section 4.5 |
| L8 | Non-uniform doping distribution | Chapter 4, section 4.6; Chapter 5, sections 5.1 and 5.2 |
| L9 | Quasi-Fermi levels; continuity equations | Chapter 5, sections 5.3-5.5 |
| L10 | Shockley equations; majority-carrier type situations | Chapter 5, section 5.6 |
| L11 | Minority-carrier type situations: statics | Chapter 5, section 5.4 |
| L12 | Minority-carrier dynamics; space-charge and high-resistivity (SCR) transport; carrier multiplication | Chapter 5, section 5.7 |
| L13 | PN junction: electrostatics in and out of equilibrium | Chapter 7, sections 7.1 and 7.2 (7.2.1, 7.2.2) |
| L14 | PN junction: depletion capacitance; current-voltage (I-V) characteristics | Chapter 7, section 7.2 (7.2.3) |
| L15 | PN junction: carrier storage; diffusion capacitance; PN diode: parasitics | Chapter 6, sections 6.2 (6.2.4) and 6.3 |
| L16 | PN junction dynamics; PN diode: non-ideal and second-order effects | Chapter 6, section 6.4 |
| L17 | Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics | Chapter 7, sections 7.1 and 7.2 |
| L18 | Metal semiconductor junction I-V characteristics | Chapter 7, section 7.2.3 |
| L19 | Schottky diode; equivalent-circuit model; ohmic contacts | Chapter 7, sections 7.3-7.5 |
| L20 | Ideal semiconductor surface | Chapter 8, sections 8.1-8.2 (8.2.1-8.2.2) |
| L21 | Metal-oxide-semiconductor (MOS) in equilibrium | Chapter 8, sections 8.2 (8.2.3, 8.2.4) and 8.3 (8.3.1) |
| L22 | MOS outside equilibrium; Poisson-Boltzmann formulation | Chapter 8, section 8.3 (8.3.2-8.3.4) |
| L23 | Simplifications to Poisson-Boltzmann formulation | Chapter 8, sections 8.3 (8.3.5) and 8.4 (8.4.1, 8.4.2) |
| L24 | Dynamics of MOS structure: C-V characteristics; three-terminal MOS | Chapter 8, sections 8.5-8.6; Chapter 9, section 9.1 |
| L25 | Inversion layer transport | Chapter 9, sections 9.2-9.4 (9.4.1, 9.4.2) |
| L26 | Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics | Chapter 9, sections 9.4 (9.4.3-9.4.5) and 9.5 |
| L27 | I-V characteristics (cont.): body effect, back bias | Chapter 9, sections 9.5 (9.5.2) and 9.6 |
| L28 | I-V characteristics (cont.): channel-length modulation, sub threshold regime | Chapter 9, section 9.7 |
| L29 | C-V characteristics; small-signal equivalent circuit models | Chapter 9, sections 9.7.3 and 9.7.4 |
| L30 | Short-channel MOSFET: short-channel effects | Ko, P. K. “Approaches to Scaling.” |
| L31 | MOSFET short-channel effects (cont.) | Ko, P. K. “Approaches to Scaling.” |
| L32 | MOSFET scaling | Ko, P. K. “Approaches to Scaling.” |
| L33 | Evolution of MOSFET design | |
| L34 | Bipolar junction transistor (BJT) intro; basic operation | Chapter 11, sections 11.1 and 11.2 (11.2.1) |
| L35 | BJT I-V characteristics in forward-active | Chapter 11, section 11.2 (11.2.1) |
| L36 | Other regimes of operation of BJT | Chapter 11, sections 11.2 (11.2.5), 11.3, and 11.4 (11.4.1) |
| L37 | BJT C-V characteristics; small-signal equivalent circuit models | Chapter 11, section 11.4.2 |
| L38 | BJT high-frequency characteristics | Chapter 11, section 11.5 (11.5.1, 11.5.3, 11.5.4, 11.5.5 but only qualitatively) |
| L39 | BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) |
