del Alamo, Jesús A. Integrated Microelectronic Devices: Physics and Modeling. (In preparation.) To be distributed in lecture.

Reference Texts

Amazon Muller, Richard S., Theodore I. Kamins, and Mansun Chan. Device Electronics for Integrated Circuits. 3rd ed. New York, NY: John Wiley & Sons, 2002. ISBN: 9780471593980.

Amazon Pierret, Robert F. Semiconductor Device Fundamentals. Reading, MA: Addison Wesley, 1996. ISBN: 9780201543933.

Amazon Streetman, Ben G. Solid State Electronics Devices. 4th ed. Upper Saddle River, NJ: Prentice Hall, 1995. ISBN: 9780131587670.

Other Useful Books

Amazon McKelvey, John P. Solid State and Semiconductor Physics. Melbourne, FL: Krieger Pub Co, 1982. ISBN: 9780898743968.

Amazon Tsividis, Yannis P. Operation and Modeling of the MOS Transistor. 2nd ed. New York, NY: McGraw-Hill, 1987. ISBN: 9780070653818.

Readings by Session

The course readings are taken from the required textbook by Prof. Jesús del Alamo.

L1 6.720 overview; fundamental concepts Chapter 1
L2 Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) Chapter 2, sections 2.1-2.4 (2.4.1)
L3 Carrier statistics in semiconductors; Fermi level Chapter 2, sections 2.4-2.6
L4 Generation and recombination mechanisms; equilibrium rates Chapter 3, sections 3.1-3.4
L5 Generation and recombination rates outside equilibrium Chapter 3, sections 3.4-3.7
L6 Carrier dynamics; thermal motion Chapter 4, sections 4.1-4.3
L7 Drift; diffusion; transit time Chapter 4, section 4.5
L8 Non-uniform doping distribution Chapter 4, section 4.6; Chapter 5, sections 5.1 and 5.2
L9 Quasi-Fermi levels; continuity equations Chapter 5, sections 5.3-5.5
L10 Shockley equations; majority-carrier type situations Chapter 5, section 5.6
L11 Minority-carrier type situations: statics Chapter 5, section 5.4
L12 Minority-carrier dynamics; space-charge and high-resistivity (SCR) transport; carrier multiplication Chapter 5, section 5.7
L13 PN junction: electrostatics in and out of equilibrium Chapter 7, sections 7.1 and 7.2 (7.2.1, 7.2.2)
L14 PN junction: depletion capacitance; current-voltage (I-V) characteristics Chapter 7, section 7.2 (7.2.3)
L15 PN junction: carrier storage; diffusion capacitance; PN diode: parasitics Chapter 6, sections 6.2 (6.2.4) and 6.3
L16 PN junction dynamics; PN diode: non-ideal and second-order effects Chapter 6, section 6.4
L17 Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics Chapter 7, sections 7.1 and 7.2
L18 Metal semiconductor junction I-V characteristics Chapter 7, section 7.2.3
L19 Schottky diode; equivalent-circuit model; ohmic contacts Chapter 7, sections 7.3-7.5
L20 Ideal semiconductor surface Chapter 8, sections 8.1-8.2 (8.2.1-8.2.2)
L21 Metal-oxide-semiconductor (MOS) in equilibrium Chapter 8, sections 8.2 (8.2.3, 8.2.4) and 8.3 (8.3.1)
L22 MOS outside equilibrium; Poisson-Boltzmann formulation Chapter 8, section 8.3 (8.3.2-8.3.4)
L23 Simplifications to Poisson-Boltzmann formulation Chapter 8, sections 8.3 (8.3.5) and 8.4 (8.4.1, 8.4.2)
L24 Dynamics of MOS structure: C-V characteristics; three-terminal MOS Chapter 8, sections 8.5-8.6; Chapter 9, section 9.1
L25 Inversion layer transport Chapter 9, sections 9.2-9.4 (9.4.1, 9.4.2)
L26 Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics Chapter 9, sections 9.4 (9.4.3-9.4.5) and 9.5
L27 I-V characteristics (cont.): body effect, back bias Chapter 9, sections 9.5 (9.5.2) and 9.6
L28 I-V characteristics (cont.): channel-length modulation, sub threshold regime Chapter 9, section 9.7
L29 C-V characteristics; small-signal equivalent circuit models Chapter 9, sections 9.7.3 and 9.7.4
L30 Short-channel MOSFET: short-channel effects Ko, P. K. "Approaches to Scaling."
L31 MOSFET short-channel effects (cont.) Ko, P. K. "Approaches to Scaling."
L32 MOSFET scaling Ko, P. K. "Approaches to Scaling."
L33 Evolution of MOSFET design
L34 Bipolar junction transistor (BJT) intro; basic operation Chapter 11, sections 11.1 and 11.2 (11.2.1)
L35 BJT I-V characteristics in forward-active Chapter 11, section 11.2 (11.2.1)
L36 Other regimes of operation of BJT Chapter 11, sections 11.2 (11.2.5), 11.3, and 11.4 (11.4.1)
L37 BJT C-V characteristics; small-signal equivalent circuit models Chapter 11, section 11.4.2
L38 BJT high-frequency characteristics Chapter 11, section 11.5 (11.5.1, 11.5.3, 11.5.4, 11.5.5 but only qualitatively)
L39 BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS)